Edge Exclusion Control With Adjustable Plasma Exclusion Zone Ring

ABSTRACT

Systems and methods for edge exclusion control are described. One of the systems includes a plasma chamber. The plasma processing chamber includes a lower electrode having a surface for supporting a substrate. The lower electrode is coupled with a radio frequency (RF) power supply. The plasma processing chamber further includes an upper electrode disposed over the lower electrode. The upper electrode is electrically grounded. The plasma processing chamber includes an upper dielectric ring surrounding the upper electrode. The upper dielectric ring is moved using a mechanism for setting a vertical position of the upper dielectric ring separate from a position of the upper electrode. The system further includes an upper electrode extension surrounding the upper dielectric ring. The upper electrode extension is electrically grounded. The system also includes a lower electrode extension surrounding the lower dielectric ring. The lower electrode extension is arranged opposite the upper electrode extension.

CLAIM OF PRIORITY

The present patent application is a divisional of and claims the benefitof and priority, under 35 U.S.C. §120, to U.S. patent application Ser.No. 14/920,821, filed on Oct. 22, 2015, and titled “Edge ExclusionControl With Adjustable Plasma Exclusion Zone Ring”, which is adivisional of and claims the benefit of and priority, under 35 U.S.C.§120, to U.S. patent application Ser. No. 13/553,734, filed on Jul. 19,2012, now issued as U.S. Pat. No. 9,184,030 on Nov. 10, 2015, and titled“Edge Exclusion Control With Adjustable Plasma Exclusion Zone Ring”,both of which are incorporated by reference herein in their entirety forall purposes.

FIELD

The present embodiments relate to wafer processing apparatus, and moreparticularly, apparatus, methods, and computer programs for edgeexclusion control with adjustable plasma exclusion zone ring.

BACKGROUND

The manufacturing of integrated circuits includes immersing siliconsubstrates (wafers) containing regions of doped silicon inchemically-reactive plasmas, where the submicron device features (e.g.,transistors, capacitors, etc.) are etched onto the surface. Once thefirst layer is manufactured, several insulating (dielectric) layers arebuilt on top of the first layer, where holes, also referred to as vias,and trenches are etched into the material for placement of theconducting interconnectors. The chemically-reactive plasmas are createdin a plasma chamber. This is an illustration of use of etching. Etchingmay be used to clean the substrate or remove residues from a surface ofthe substrate.

As an amount of etching changes, hardware of the plasma chamber ischanged. Such change in hardware results in an increase in cost andeffort used to etch a substrate.

It is in this context that embodiments of the invention arise.

SUMMARY

Embodiments of the disclosure provide apparatus, methods and computerprograms for edge exclusion control with adjustable plasma exclusionzone ring. It should be appreciated that the present embodiments can beimplemented in numerous ways, e.g., a process, an apparatus, a system, adevice, or a method on a computer readable medium. Several embodimentsare described below.

In various embodiments, an upper plasma exclusion zone (PEZ) ring ismoved independently within a plasma processing chamber to cleandifferent areas of a surface of a substrate that are measured from abevel edge of the substrate. The upper PEZ ring is moved independent ina vertical direction independent of movement of an upper electrode ofthe chamber and movement of an upper electrode extension within thechamber. There is no need to use different upper PEZ rings to cleandifferent areas of the substrate surface.

Also, sometimes, when the upper PEZ ring is clamped to the upperelectrode to move with the upper electrode, during movement of the upperelectrode, a gap between the upper PEZ ring and the substrate increasesbeyond a certain distance, e.g., 0.6 millimeters (mm), to often causeunconfinement of plasma within the gap. By controlling the movement ofthe upper PEZ ring independent of movement of the upper electrode, thegap is controlled to avoid the increase in the distance. The smaller thegap, the less the plasma encroachment, which leads to a smaller edgeexclusion of a surface area of the substrate from a bevel edge of thesubstrate. The edge exclusion occurs to perform a processing operation,e.g., cleaning operation, etching operation, depositing operation, etc.on the surface area from the bevel edge. The larger the gap, the morethe plasma encroachment, which leads to a large edge exclusion. In anumber of embodiments, a gap between the upper electrode and thesubstrate is maintained between 0.35-0.4 mm and the upper PEZ ring ismoved to control edge exclusion and to avoid plasma unconfinementissues. Also, in various embodiments, a gap between the upper electrodeextension and the substrate is maintained between 0.35-0.4 mm and theupper PEZ ring is moved to control edge exclusion and to avoid plasmaunconfinement issues.

In a number of embodiments, a plasma chamber includes a lower electrodehaving a surface for supporting a substrate. The lower electrode iscoupled with a radio frequency (RF) power supply. The plasma chamberfurther includes an upper electrode disposed over the lower electrode.The upper electrode is electrically grounded. The plasma chamberincludes an upper dielectric ring surrounding the upper electrode. Theupper dielectric ring is adjusted using a mechanism for setting avertical position of the upper dielectric ring. The plasma chamberincludes an upper electrode extension surrounding the upper dielectricring. The upper electrode extension is also electrically grounded. Theplasma chamber includes a lower dielectric ring surrounding the lowerelectrode. The lower dielectric ring is set at a level that is below alevel of the surface of the lower electrode. The plasma chamber includesa lower electrode extension surrounding the lower dielectric ring. Thelower electrode extension is arranged opposite the upper electrodeextension. An edge processing region is defined between the upper andlower dielectric rings and the upper and lower electrode extensions.When the substrate is present on the surface of the lower electrode, anedge of the substrate extends into the edge processing region.

In various embodiments, a plasma processing chamber is described. Theplasma processing chamber includes a lower electrode having a surfacefor supporting a substrate. The lower electrode is coupled with a radiofrequency (RF) power supply. The plasma processing chamber includes anupper electrode disposed over the lower electrode. The upper electrodeis electrically grounded. The plasma processing chamber further includesan upper dielectric ring surrounding the upper electrode. The upperdielectric ring is moved using a mechanism for setting a verticalposition of the upper dielectric ring separate from a position of theupper electrode. The plasma processing chamber further includes an upperelectrode extension surrounding the upper dielectric ring. The upperelectrode extension is electrically grounded. The plasma processingchamber also includes a lower electrode extension surrounding the lowerdielectric ring. The lower electrode extension is arranged opposite theupper electrode extension. An edge processing region is defined betweenthe upper and lower electrode extensions. When the substrate is presenton the surface of the lower electrode, an edge of the substrate extendsinto the edge processing region.

In one embodiment, a plasma processing chamber for bevel edge cleaningis described. The plasma processing chamber includes an upper electrode,a lower electrode positioned below the upper electrode, and an upperplasma exclusion zone (PEZ) ring peripheral to the upper electrode. Theupper PEZ ring is settable to multiple positions toward or away from thelower electrode without vertical adjustment of the upper electrode. Theplasma processing chamber further includes an upper electrode extensionperipheral to the upper PEZ ring and a lower electrode extensionsurrounding the lower electrode.

In a number of embodiments, a system for controlling a size of an edgeprocessing region is described. The system includes an upper electrode,an upper PEZ ring configured to reduce an effect of plasma on the upperelectrode, a system controller configured to generate signals regardinga first position and a second position of the upper PEZ ring, anactuator, and a position controller. The position controller isconfigured to control the actuator based on the signals to achieve thefirst position and the second position. The first and second positionsare achieved independent of movement of the upper electrode.

In several embodiments, a method for bevel edge cleaning is described.The method includes positioning a lower electrode below an upperelectrode, placing an upper electrode extension peripheral to the upperelectrode, placing a lower electrode extension peripheral to the lowerelectrode, and situating an upper PEZ ring between the upper electrodeand the upper electrode extension. The method further includes engagingthe PEZ ring with multiple positions while maintaining the upperelectrode at a position.

Other aspects will become apparent from the following detaileddescription, taken in conjunction with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The embodiments may best be understood by reference to the followingdescription taken in conjunction with the accompanying drawings.

FIG. 1A is a diagram of a system for changing a gap associated with anedge processing region, in accordance with an embodiment of theinvention.

FIG. 1B is a diagram of a system in which a gap associated with an edgeprocessing region is different than that in FIG. 1A, in accordance withan embodiment of the invention.

FIG. 1C is a diagram of a system in which a gap associated with an edgeprocessing region is different than that in FIGS. 1A and 1B, inaccordance with an embodiment of the invention.

FIG. 2 is a diagram of a system for using an upper plasma exclusion zone(PEZ) ring to generate various gaps G1 thru G4 to create various edgeprocessing regions, in accordance with an embodiment of the invention.

FIG. 3 is a diagram of a system for generating various gaps between alower PEZ ring and the upper PEZ ring, in accordance with an embodimentof the invention.

FIG. 4 is a top view of a portion of an upper electrode assembly and aportion of a lower electrode assembly, in accordance with an embodimentof the invention.

FIG. 5 is a block diagram of a system for controlling a position of theupper PEZ ring via a positioning mechanism, in accordance with anembodiment of the invention.

FIG. 6 is an isometric view of the upper PEZ ring, in accordance with anembodiment of the invention.

FIG. 7A is a block diagram of a system for using multiple electricmotors to control a position of the upper PEZ ring independent ofcontrol of positions of an upper electrode and an upper electrodeextension (UEE), in accordance with an embodiment of the invention.

FIG. 7B is a block diagram of a system for using multiple positioningmechanisms to control a position of the upper PEZ ring independent ofcontrol of positions of an upper electrode and an upper electrodeextension (UEE), in accordance with an embodiment of the invention.

FIG. 8 is a block diagram of a system for controlling a position of theupper PEZ ring via a motor, in accordance with an embodiment of theinvention.

FIG. 9 is a cross-sectional view of an embodiment of a plasma processingchamber, in accordance with an embodiment of the invention.

FIG. 10 is a zoom-in of the cross-section view of the plasma processorchamber of FIG. 9, in accordance with an embodiment of the invention.

FIG. 11 is a cross-sectional view of a portion of a plasma processingchamber, in accordance with an embodiment of the invention.

FIG. 12 is a diagram of a system for generating plasma within an edgeprocessing region, in accordance with an embodiment of the invention.

FIG. 13 is a diagram of a system for calibrating and using spacers todetermine positions of the upper PEZ ring within a plasma processingchamber, in accordance with an embodiment of the invention.

FIG. 14 is an isometric view of the upper PEZ ring that is supported bymultiple spacers, in accordance with an embodiment of the invention.

FIG. 15 is a top view of the upper PEZ ring that is supported by thespacers, in accordance with an embodiment of the invention.

FIG. 16 is a diagram of an embodiment of a system in which an upper PEZring is equipped with tensioners to achieve one or more positions, inaccordance with an embodiment of the invention.

FIG. 17 is a graph that is a plot of normalized etch rate (ER) versus aradius on a substrate, in accordance with an embodiment of theinvention.

DETAILED DESCRIPTION

The following embodiments describe systems and methods for edgeexclusion control with movement of plasma exclusion zone ring. It willbe apparent that the present embodiments may be practiced without someor all of these specific details. In other instances, well known processoperations have not been described in detail in order not tounnecessarily obscure the present embodiments.

FIG. 1A is a diagram of an embodiment of a system 120 for changing a gapassociated with an edge processing region 111. The system 120 includesan upper electrode assembly, which further includes an upper electrode122, an upper plasma exclusion zone (PEZ) ring 124, and an upperelectrode extension (UEE) 126, which has a lower surface 126 a at alevel 126 b. It should be noted that in some embodiments, a PEZ ring anda “dielectric ring” are used interchangeably herein. The upper PEZ ring124 is located horizontally between the upper electrode 122 and the UEE126. Also, the upper PEZ ring 124 is located at a periphery of the upperelectrode 122. The upper PEZ ring 124 shields, e.g., protects, the upperelectrode 122 from plasma generated within the edge processing region111. For example, the upper PEZ ring 124 reduces an effect of plasma onthe upper electrode 122. The UEE 126 is located at a periphery of theupper PEZ ring 124. The upper PEZ ring 124 horizontally surrounds theupper electrode 122 and the UEE 126 horizontally surrounds the upper PEZring 124.

The upper PEZ ring 124 lacks a flange and the upper electrode 122 alsolacks a flange that engages with the flange of the upper PEZ ring 124 toclamp the upper PEZ ring 124. For example, the upper PEZ ring 124 is ofa polygonal shape, e.g., square, rectangle, etc. In various embodiments,the upper electrode 122 acts as a dielectric. The UEE 126 is formed ofaluminum, pure silicon (Si), chemical vapor deposited (CVD) Si, or anysuitable high-purity conductive material.

The system 120 further includes a lower electrode assembly, whichfurther includes a lower electrode 110, a lower PEZ ring 112, and alower electrode extension (LEE) 114, which has a top surface 114 a. Thelower electrode 110 is located below the upper electrode 122. A gap 115a is formed between a level 113 a of a bottom surface 191 of the upperelectrode 122 and a level 110 a of a top surface of the lower electrode110.

The lower PEZ ring 112 is located horizontally between the lowerelectrode 110 and the LEE 114. For example, the lower PEZ ring 112 islocated at a periphery of the lower electrode 110 and the LEE 114 islocated at a periphery of the lower PEZ ring 112. The LEE 114horizontally surrounds the lower PEZ ring 112 and the lower PEZ ring 112horizontally surrounds the lower electrode 110. A substrate 116 issituated on the lower electrode 110 for cleaning the substrate 116. Agap 109 is formed between a top surface 112 a of the lower PEZ ring 112and a lower surface of the substrate 116.

In various embodiments, the top surface 112 a of the lower PEZ ring 112is set at a level that is below the level 110 a of the top surface ofthe lower electrode 110. In a number of embodiments, the top surface 112a of the lower PEZ ring 112 is set at a level that is same as the level110 a of the top surface of the lower electrode 110.

In several embodiments, the top surface 114 a of the lower electrodeextension 114 is at a level higher than a level of the top surface 112 aof the lower PEZ ring 112. In various embodiments, top surface 114 a ofthe lower electrode extension 114 is at a level lower than or same asthe level of the top surface 112 a of the lower PEZ ring 112.

Examples of cleaning operations include removing residues, e.g.,polymers, from a top surface of substrate 116 upto 0.5 millimeters (mm)from the edge 119, removing Tungsten/Titanium Nitride (W/TiN) layersfrom the top surface of substrate 116 up to 1 mm from the edge 119,and/or removing oxide/nitride on the top surface of substrate 116 fromthe edge 119 upto a distance from the edge 119. The residues may becreated during fabrication of the substrate 116 and/or electricalcircuitry on top of the substrate 116. All cleaning operations areperformed using the same upper PEZ ring 124 and by moving the upper PEZring 124 between different positions, which are described below. Inseveral embodiments, any other operation, e.g., etching, depositing,etc., is performed on the substrate 116 with the system 120.

Each of the lower electrode 110 and the LEE 114 is formed of a metal,e.g., anodized aluminum, an aluminum alloy, etc. Moreover, each of theupper PEZ ring 124 and the lower PEZ ring 112 is fabricated from anelectrically conductive, semiconductive or dielectric material. Forexample, each of the upper PEZ ring 124 and the lower PEZ ring 112 ismade of a dielectric material, e.g., aluminum oxide (Al₂O₃), aluminumnitride (AlN), silicon oxide (SiO₂), silicon carbide (SiC), siliconnitride (Si₃N₄), silicon (Si), and yttria (Y₂O₃). In severalembodiments, each of the upper PEZ ring 124 and the lower PEZ ring 112is a composite ring of metal, ceramic or polymer coated with aconductive or dielectric material.

An edge exclusion region 121 is formed between a portion 117 on thesubstrate 116 and an edge 119 of the substrate 116. For example, theedge exclusion region 121 ranges from less than 1 mm to 2 mm on thesubstrate 116 from the edge 119. As another example, the edge exclusionregion 121 ranges from less than 0.5 mm to 2 mm on the substrate 116from the edge 119. In various embodiments, the portion 117 is a circlethat extends along a periphery of the substrate 116. In severalembodiments, an opposite edge 123 of the lower PEZ ring 112 is alignedwith an edge 125 of the upper PEZ ring 124 along a y-axis. The edge 123is located opposite to the edge 117. In a number of embodiments, theedge 123 lacks alignment with the edge 125. Various residues, e.g.,polymers are removed from the edge exclusion region 121 using plasmathat is generated within an edge processing region. In a number ofembodiments, the edge exclusion region 121 lacks electrical circuitry,e.g., transistors, capacitors, resistors, etc.

When a process gas is supplied within an edge processing region 111, aradio frequency (RF) power supply 152 supplies RF power via an impedancematching circuit 150 to the lower electrode 110. Also, each of the upperelectrode 122, the UEE 126, and the LEE 114 are grounded. The edgeprocessing region 111 is located between the upper PEZ ring 124, thelower PEZ ring 112, the UEE 126, and the LEE 114. Examples of theprocess gas are provided below. When the process gas and the RF powerare supplied, plasma is struck in the edge processing region 111.

A motor 238 is used to move the upper electrode 122. The motor 238 isother than a motor or a heater that is used to move the upper PEZ ring124. For example, the motor 238 operates to change a position of theupper electrode 122 independent of the motor or heater that operates tochange a position of the upper PEZ ring 124. As another example, thereis no need to operate the motor 238 when the motor or heater is operatedto change a position of the upper PEZ ring 124.

In various embodiments, the upper PEZ ring 124 is moved independent ofmovement of the upper electrode 122 to facilitate a difference betweenthe level 113 a of the bottom surface 191 of the upper electrode 122 anda level 113 b of a bottom surface 205 of the upper PEZ ring 124. Thedifference between the levels 113 a and 113 b is measured along they-axis. In a number of embodiments, when the bottom surface 205 of theupper PEZ ring 124 is at the level 113 b, the upper PEZ ring 124 isrecessed away from the level 113 a of the upper electrode 122 in avertical direction away from the lower PEZ ring 112. The upper PEZ ring124 is recessed away by the motor or heater coupled with the upper PEZring 124.

In several embodiments, the upper PEZ ring 124 is moved independent ofmovement of the UEE 126 to facilitate a difference between the level 126b of the bottom surface 126 a of the UEE 126 and the level 113 b of theupper PEZ ring 124. The difference between the level 126 b of the bottomsurface 126 a and the level 113 b is measured along the y-axis. In anumber of embodiments, when the bottom surface 205 of the upper PEZ ring124 is at the level 113 b, the upper PEZ ring 124 is recessed away fromthe level 126 b of the bottom surface 126 a of the UEE 126 in a verticaldirection away from the lower PEZ ring 112.

In several embodiments, a gap 115 b between the lower surface of theupper electrode 122 and a top surface of the substrate 116 is maintainedto not allow plasma from encroaching between the upper electrode 122 andthe lower electrode 110. For example, the gap 115 b is less than 1 mm.As another example, the gap 115 b is less than 0.4 mm. As yet anotherexample, the gap 115 b is less than 0.6 mm.

FIG. 1B is a diagram of an embodiment of the system 120 in which a gapassociated with an edge processing region is different than that in FIG.1A. As shown in FIG. 1B, the bottom surface 205 of the upper PEZ ring124 is at the same level 113 a as that of the upper electrode 122. Forexample, the bottom surface 205 of the upper PEZ ring 124 is coplanarwith the lower surface 191 of the upper electrode 122. The motor orheater coupled with the upper PEZ ring 124 moves the upper PEZ ring 124to achieve the level 113 a or any other level.

Also, an edge processing region 111 a has a smaller volume than that ofthe edge processing region 111 (FIG. 1A) when a distance between thelevel 113 a (FIG. 1A) and the lower PEZ ring 112 is less than a distancebetween the level 113 b and the lower PEZ ring 112. For example, plasmawithin the edge processing region 111 a encroaches upon a lesser surfacearea on a top surface of the substrate 116 within the edge exclusionregion 121 than that encroached by plasma within the edge processingregion 111.

In a number of embodiments, the bottom surface 205 of the upper PEZ ring124 is at the same level 113 a as that of level 126 b of the bottomsurface 126 a of the UEE 126. In various embodiments, the bottom surface205 of the upper PEZ ring 124 is at the same level as that of the bottomsurface 126 a of the UEE 126 and of the bottom surface 191 of the upperelectrode 122.

FIG. 1C is a diagram of an embodiment of the system 120 in which a gapassociated with an edge processing region is different than that in FIG.1A and than that in FIG. 1B. As shown in FIG. 1C, the bottom surface 205of the upper PEZ ring 124 is below the level 113 a of the upperelectrode 122. The upper PEZ ring 124 is moved to protrude past thelevel 113 a of the upper electrode 122 in a downward vertical directiontoward the lower PEZ ring 112 to achieve a level 113 c. Also, an edgeprocessing region 111 b has a smaller volume than that of the edgeprocessing region 111 a (FIG. 1B) when a distance between the level 113c and the lower PEZ ring 112 is less than a distance between the level113 a (FIG. 1B) and the lower PEZ ring 112. For example, plasma withinthe edge processing region 111 b encroaches upon a lesser surface areaon a top surface of the substrate 116 within the edge exclusion region121 than that encroached by plasma within the edge processing region 111a.

In a number of embodiments, the bottom surface 205 of the upper PEZ ring124 is below the level 126 b of the bottom surface 126 a of the UEE 126.In various embodiments, the bottom surface 205 of the upper PEZ ring 124is between a level of the lower surface 191 of the upper electrode 122and a level of the lower surface 126 a of the UEE 126.

FIG. 2 is a diagram of an embodiment of a system 131 for using the upperPEZ ring 124 to generate various gaps G1 thru G4 to create various edgeprocessing regions. With change in the gaps, a surface area of a topsurface of the substrate 116 within the edge exclusion zone 121 that isencroached by plasma within an edge processing region changes. Forexample, when the gap between the upper PEZ ring 124 and the substrate116 changes from G2 to G1, top surface area of the substrate 116 that isencroached by plasma within an edge processing region increases. Asanother example, when the gap between the upper PEZ ring 124 and thesubstrate 116 changes from G3 to G4, top surface area of the substrate116 that is encroached by plasma within an edge processing regiondecreases.

When the gap G1 is created, an amount of etching occurs on a surfacearea A1 at a distance D1 from the edge 119. Moreover, when the gap G2 iscreated, an amount of etching occurs on a surface area A2 at a distanceD2 from the edge 119. Also, when the gap G3 is created, an amount ofetching occurs on a surface area A3 at a distance D3 from the edge 119.When the gap G4 is created, an amount of etching occurs on a surfacearea A4 at a distance D4 from the edge 119.

Each gap G1, G2, G3, and G4 is formed between a bottom surface 205 ofthe upper PEZ ring 124 and a top surface 135 of the substrate 116. Theupper PEZ ring 124 is moved between four different positions, e.g., P1thru P4, to generate the gaps G1 thru G4. As shown, in variousembodiments, there is lack of movement, e.g., vertical movement, of theupper electrode 122 and/or the UEE 126 during movement of the upper PEZring 124 between the four different positions P1 thru P4. There is noneed to move the upper electrode 122 and/or the UEE 126 at a time theupper PEZ ring 124 is moved between the four positions P1 thru P4.

In a variety of embodiments, the upper electrode 122 is moved betweenthe four positions P1 thru P4 simultaneous with movement of the upperPEZ ring 124 between the positions P1 thru P4. For example, the upperelectrode 122 is moved to a different position than a position of theupper PEZ ring 124. For example, the upper electrode 122 is moved to theposition P4 and the upper PEZ ring 124 is moved to the position P3. Asanother example the upper electrode 122 is moved to the position P1 andthe upper PEZ ring 124 is moved to the position P2. In severalembodiments, the upper electrode 122 and the upper PEZ ring 124 aremoved to the same position simultaneously.

The change in the positions P1 thru P4 changes the gaps G1 thru G4. Thechange in the gaps G1 thru G4 changes a surface area of substrate 116that is encroached upon by plasma within an edge processing region. Forexample, as the gap changes from G1 thru G4, the surface area changesfrom A1 thru A4 and a lower amount of plasma than that encroached by theplasma within the gap G1 encroaches on the substrate 116. As anotherexample, as the gap changes to G3, the surface area changes to A3.

It should be noted that the above-described embodiments are describedwith respect to four gaps G1 thru G4, four positions P1 thru P4, andfour surface areas A1 thru A4. In several embodiments, the embodimentsmay be described with respect to any number of gaps and the number isthe same as that of positions of the upper PEZ ring 124 and surfaceareas of the substrate 116 from the edge 119.

FIG. 3 is a diagram of an embodiment of a system 128 for generatingvarious gaps between a lower PEZ ring 142 and the upper PEZ ring 124.The system 128 includes a bevel etcher 130, a system controller 170, anda gas supply 198. As used herein, the terms controller, centralprocessing unit, processor, microprocessor, application specificintegrated circuit, and programmable logic device are usedinterchangeably. The system 128 further includes the impedance matchingcircuit 150, the RF power supply 152, and a vacuum pump 192.

The system controller 170 sends a signal to the gas supply 198 to supplythe process gas via a center gas feed 194 to an upper electrode 122within the bevel etcher 130. The upper electrode 122 is coupled withground, e.g., a ground voltage. The process gas is supplied via theupper electrode 122 to a gap 137 between the upper electrode 122 and thebottom electrode 110 of the bevel etcher 130 to clean the substrate 116(FIG. 2). Examples of the process gases include an oxygen-containinggas, such as O₂. Other examples of the process gas include afluorine-containing gas, e.g., CF₄, SF₆, C₂F₆, etc.

When the process gas is supplied within the gap 137 and a signal isreceived by the RF power supply 152 from the system controller 170, theRF power supply 152 provides an RF power via the impedance matchingcircuit 150 to the lower electrode 110 to energize the gas to generateplasma within the gap 137. The electrodes 122 and 110 are centered withrespect to a center line 200. In several embodiments, the RF powersupply 152 supplies power at frequencies ranging from 2 megahertz (MHz)to 60 MHz. In various embodiments, instead of the RF power supply 152,multiple RF power supplies of different frequencies, e.g., a first RFpower supply operated at 2 MHz, a second RF power supply operated at 27MHz, and a third power supply operated at 60 MHz, are coupled with theimpedance matching circuit 150 to supply RF power to the lower electrode110.

Similarly, when a signal is received from the system controller 170, thegas supply 198 supplies the process gas via an edge gas feed 196 to anUEE 138 of the bevel etcher 130. The UEE 138 is coupled with ground. Theprocess gas enters a gap 139 between the UEE 138 and an LEE 140. The LEE140 is grounded via a lower metal collar 157. An example of the lowermetal collar is provided in U.S. Pat. No. 7,858,898, which isincorporated by reference herein in its entirety.

When the process gas is supplied within the gap 139, the RF power supply152 supplies RF power via the impedance matching circuit 150 and thelower electrode 110 to the LEE 140 to energize the process gas withinthe gap 139. When the process gas within the gap 139 is energized by RFpower of the RF power supply 152, plasma is generated within the gap 139to clean a bevel edge of the substrate 116 (FIG. 2). The RF power supply152 supplies RF power to the lower electrode 110 upon receiving a signalfrom the system controller 170. The impedance matching circuit 150matches an impedance of the RF power supply 152 with an impedance ofplasma created within the gap 137 or 139.

The bevel etcher 130 includes a plasma chamber 136 that has a top wall132, a bottom wall 134 and two side walls 143 and 145. In severalembodiments, at least a portion of the bottom wall 134 is integrallyform with at least a portion of the side wall 143 and at least a portionof the side wall 145. In various embodiments, at least a portion of thetop wall 132 is integrally formed with at least a portion of the sidewall 143 and at least a portion of the side wall 145.

The plasma chamber 136 includes an upper metal component 230 that isgrounded to couple the upper electrode 122 and the UEE 138 with ground.A plurality of positioning mechanisms 144, 146, and 148 are locatedwithin the upper metal component 230. For example, the positioningmechanisms 144, 146, and 148 are embedded within the upper metalcomponent 230. Examples of a positioning mechanism include a bellow anda bladder. A positioning mechanism is made of one or more metals, e.g.,aluminum, metal alloys, ferrous metals, etc.

In several embodiments, instead of the positioning mechanisms 144, 146,and 148, links are located within the upper metal component 230.Examples of links include a lead screw, a rod, a toothgear, and apinset. Also, links are made of one or more metals. A furtherdescription of links is provided below. A link or a positioningmechanism is sometimes referred to herein as a driver.

In a number of embodiments, instead of the positioning mechanisms 144,146, and 148, three separate heating elements, e.g., heaters, are usedto control movement of the upper PEZ ring 124, the upper electrode 122,and the UEE 126. The heating element that is attached to the upper PEZring 124 is coupled with a power supply and the power supply iscontrolled by the system controller 170. The system controller 170 turnson the power supply, which then provides power to the heating element.When the heating element is provided with power, the heating elementheats to push down on the upper PEZ ring 124 to move the upper PEZ ring124 vertically downward, e.g., from the position P1 to the position P2,from the position P2 to the position P3, or from the position P3 to theposition P4. Similarly, the system controller 170 turns off the powersupply, which then stop supplying power to the heating element. Theheating element cools to move the upper PEZ ring 124 vertically upwarde.g., from the position P4 to the position P3, from the position P3 tothe position P2, or from the position P2 to the position P1. In a numberof embodiments, a heating element, a link, and a positioning mechanismare examples of a mechanism to adjust a position of the upper PEZ ring124.

Similarly, a heating element is attached to the upper electrode 122 tocontrol movement of the upper electrode 122 and another heating elementis attached to the UEE 138 to control movement of the UEE 138. Each ofheating element attached to the upper electrode 122 and heating elementattached to the UEE 138 is controlled in a similar manner as that of theheating element attached to the upper PEZ ring 124. For example, theheating element attached to the upper electrode 122 is supplied withpower under control of the system controller 170. The heating element,in this example, expands to change position of the upper electrode 122.

The upper metal component 230 is adjacent to the top wall 132. The UEE138, the upper PEZ ring 124, the upper electrode 122 are fastened, e.g.,screwed, bolted, etc., to the upper metal component 230.

The lower electrode 110 is supported on a support 190. For example, thelower electrode 110 is attached to the support 190. Examples of asupport are provided in U.S. Pat. No. 7,858,898.

In several embodiments, an upper ring, made of a dielectric material,surrounds the UEE 138. In various embodiments, a lower ring, made of adielectric material, surrounds the LEE 140.

The upper metal component 230, the top wall 132, UEE 138, the upper PEZring 124, the upper electrode 122, the side walls 143 and 145, thebottom wall 134, the LEE 140, the lower PEZ ring 142, the lowerelectrode 110, the support 190, and the lower metal collar 157 are partsof the plasma chamber 136. The bevel etcher 130 includes the plasmachamber 136. In various embodiments, the bevel etcher 130 includes theplasma chamber 136, a portion of the positioning mechanism 148 or aportion of a link that is coupled with the upper electrode 122.

The positioning mechanism 146 operates independent of operation of thepositioning mechanism 148 and/or the positioning mechanism 144. Forexample, the positioning mechanism 146 moves the upper electrode 122 toa vertical position different than a vertical position to which theupper PEZ ring 124 and/or different than a vertical position to whichthe UEE 138 is moved. The positioning mechanism 148 is operated to movethe upper electrode 122 and the positioning mechanism 144 is operated tomove the UEE 138.

The positioning mechanism 144 is controlled by the system controller 170via a vacuum pump and/or an air compressor and via a position controllerin a similar manner in which the positioning mechanism 146 is controlledby the system controller 170 via a vacuum pump and/or an air compressorand via a position controller. Similarly, the positioning mechanism 148is controlled by the system controller 170 via a vacuum pump and/or anair compressor and via a position controller in a similar manner inwhich the positioning mechanism 146 is controlled by the systemcontroller 170 via a vacuum pump and/or an air compressor and via aposition controller.

After a processing operation, e.g., a cleaning operation, an etchingoperation, a deposition, is performed on the substrate 116 (FIG. 2), theplasma within the gap 137 and/or 139 and/or the process gas is withdrawnfrom the plasma chamber 136 through a plurality of holes into a bottomspace 155 and then to a vacuum pump 192. The vacuum pump 192 createsvacuum in the bottom space 155 upon receiving a signal from the systemcontroller 170.

FIG. 4 is a top view of an embodiment of a portion of the upperelectrode assembly and a portion of the lower electrode assembly. Theportion of the upper electrode assembly includes the UEE 138, the upperPEZ ring 124, and the upper electrode 122. The lower electrode assemblyincludes the LEE 140, the lower PEZ ring 142, and the lower electrode110. The center line 200 passes through a center of upper electrode 122and a center of the lower electrode 110. In various embodiments, thecenter of the upper electrode 122 coincides with a centroid of the UEE138 and of the upper PEZ ring 124. In a number of embodiments, thecenter of the lower electrode 110 coincides with a centroid of the LEE140 and of the lower PEZ ring 142.

In a variety of embodiments, an edge 163 of the UEE 138 is aligned alongthe y-axis with an edge 169 of the LEE 140. The alignment is indicatedby a line 175. In various embodiments, an edge 165 of the upper PEZ ring124 is aligned along the y-axis with an edge 171 of the lower PEZ ring142. The alignment is indicated by a line 177. In several embodiments,an edge 167 of the upper electrode 122 is aligned along the y-axis withan edge 173 of the lower electrode 140. The alignment is indicated by aline 179. The line 175 is tangential to the edges 163 and 169, the line177 is tangential to the edges 165 and 171, and the line 179 istangential to the edges 167 and 173. In some embodiments, the edge 163lacks alignment with the edge 169, the edge 165 lacks alignment with theedge 171, and/or the edge 167 lacks alignment with the edge 173.

FIG. 5 is a block diagram of an embodiment of a system 161 forcontrolling a position of the upper PEZ ring 124 via the positioningmechanism 146. The system 161 includes a facility 181, e.g., a room, abuilding, etc., in which the system controller 170, an input device 174,a memory device 176, and an output device 183 are situated. Examples ofa memory device include a random access memory (RAM) and a read-onlymemory (ROM). Other examples of a memory device include a flash memory,a compact disc, a magnetic memory, and a hard disk. Examples of an inputdevice include a mouse, a keyboard, a stylus, a keypad, and atouchscreen. The output device 183 may be a display device, e.g., acathode ray tube display, a liquid crystal display, a light emittingdiode display, plasma display, etc.

The memory device 176 stores program recipes to process the substrate116 (FIG. 2). Examples of program recipes include temperature to bemaintained with the processing chamber 136 (FIG. 3), pressure to bemaintained within the processing chamber 136, amount of the process gasto be supplied within the gap 137 and/or 139 (FIG. 3), a frequency ofthe RF power supply 152 (FIG. 3), amount of power supplied by the RFpower supply 152, position of the upper electrode 122 (FIG. 3), positionof the UEE 138 (FIG. 3), position of the upper PEZ ring 124, times atwhich signals are provided to activate the RF power supply 152 to supplyRF power, times at which signals are provided to activate the vacuumpump 192 (FIG. 3) to create vacuum, and times at which signals areprovided to activate the gas supply 198 to supply the process gas. Thesystem controller 170 retrieves the program recipes from the memorydevice 176 and operates the gas supply 198, the RF power supply 152, thepositioning mechanisms 144, 146, and 148, and the vacuum pump 192according to the program recipes. In several embodiments, the programrecipes are received from a user via the input device 174.

Upon determining that plasma is created within the gap 139 (FIG. 3), thesystem controller 170 retrieves a position, such as the position P1, P2,P3, or P4, of the upper PEZ ring 124 with respect to the y-axis from thememory device 176 and provides the position to a position controller172. The position controller 172 forwards the position of the upper PEZring 124 to a vacuum pump and/or air compressor 184. The vacuum pumpand/or air compressor 184 creates amount of vacuum and/or aircompression within the positioning mechanism 146 to achieve the positionof the upper PEZ ring 124 specified by the system controller 170.

FIG. 6 is an isometric view of an embodiment of the upper PEZ ring 124.The upper PEZ ring 124 is controlled at three different points 1, 2, and3 to achieve a position, e.g., P1, P2, P3, or P4, with respect to they-axis. Three separate links 242 ₁, 242 ₂, and 242 ₃ are attached to thepoints 1, 2, and 3 to control positions of the upper PEZ ring 124 at thepoints 1, 2, and 3. For example, the link 242 ₁ is attached to the point1, the link 242 ₂ is attached to the point 2, and the link 242 ₃ isattached to the point 3.

In several embodiments, instead of the links 242 ₁, 242 ₂, and 242 ₃,three separate positioning mechanisms or three separate heating elementsare attached to the upper PEZ ring 124 at surface areas B1, B2, and B3on a top surface 303 of the upper PEZ ring 124. Each positioningmechanism is coupled with the system controller 170 via a differentvacuum pump and/or air compressor and a different position controller.

FIG. 7A is a block diagram of an embodiment of a system 185 forcontrolling a position of the upper PEZ ring 124 independent of controlof positions of the upper electrode 122 and the UEE 126. The systemcontroller 170 receives program recipes 206 via a user interface system204, e.g., the output device 183 (FIG. 5). The program recipes 206 aredescribed above. In addition, the program recipes 206 include a numberof rotations to be executed by a motor 210 ₂ to achieve the position P1,P2, P3, or P4 of the upper PEZ ring 124. The program recipes 206 furtherinclude a number of rotations to be executed by a motor 210 ₁ to achievea position of the upper electrode 122 and a number of rotations to beexecuted by a motor 210 ₃ to achieve a position of the UEE 126.

Upon retrieving the program recipes 206 from the memory device 176 (FIG.5), the system controller 170 sends a signal to a motor controller 208₁, sends a signal to a motor controller 208 ₂, and sends a signal to amotor controller 208 ₃. The signal sent to the motor controller 208 ₁includes a number of rotations of the motor 210 ₁ to achieve a verticalposition, along the y-axis, of the upper electrode 122. Moreover, thesignal sent to the motor controller 208 ₂ includes a number of rotationsof the motor 210 ₂ to achieve a vertical position, along the y-axis, ofthe upper PEZ ring 124. Also, the signal sent to the motor controller208 ₃ includes a number of rotations of the motor 210 ₃ to achieve avertical position, along the y-axis, of the UEE 126.

The motor 210 ₁ rotates a number of rotations that is received from themotor controller 208 ₁. Similarly, the motor 210 ₂ rotates a number ofrotations that is received from the motor controller 208 ₂ and the motor210 ₃ rotates a number of rotations that is received from the motorcontroller 208 ₃.

When the motor 210 ₁ rotates, a link 178 ₁ that is attached to the motor210 ₁ also rotates. The link 178 ₁ forms a mating connecting with theupper electrode 122. For example, the link 178 ₁ includes screw threadsand complementary threads are formed within the upper electrode 122 toallow the upper electrode 122 to move vertically along the y-axis withthe rotation of the link 178 ₁.

Similarly, when the motor 210 ₂ rotates, a link 178 ₂ that is attachedto the motor 210 ₂ also rotates. For example, when the motor 210 ₂rotates in a clockwise direction, the link 178 ₂ rotates in theclockwise direction and when the motor 210 ₂ rotates in acounterclockwise direction, the link 178 ₂ rotates in thecounterclockwise direction. The link 178 ₂ forms a mating connectingwith the upper PEZ ring 124. For example, the link 178 ₂ includes screwthreads and complementary threads are formed within the upper PEZ ring124 to allow the upper PEZ ring 124 to move vertically along the y-axiswith the rotation of the link 178 ₂.

Also, when the motor 210 ₃ rotates, a link 178 ₃ that is attached to themotor 210 ₃ also rotates. The link 178 ₃ forms a mating connecting withthe UEE 126. For example, the link 178 ₃ includes screw threads andcomplementary threads are formed within the UEE 126 to allow the UEE 126to move vertically along the y-axis with the rotation of the link 178 ₃.

In a number of embodiments, when the link 178 ₂ rotates in the clockwisedirection for a number of rotations, the upper PEZ ring 124 achieves theposition P1 between the upper electrode 122 and the UEE 126. Moreover,when the link 178 ₂ rotates further in the clockwise direction for anumber of rotations, the upper PEZ ring 124 achieves the position P2between the upper electrode 122 and the UEE 126. Also, when the link 178₂ rotates further in the clockwise direction for a number of rotations,the upper PEZ ring 124 achieves the position P3 between the upperelectrode 122 and the UEE 126. When the link 178 ₂ rotates further inthe clockwise direction for a number of rotations, the upper PEZ ring124 achieves the position P4 between the upper electrode 122 and the UEE126.

Similarly, when the link 178 ₂ rotates in the counterclockwise directionfor a number of rotations, the upper PEZ ring 124 achieves the positionP3 between the upper electrode 122 and the UEE 126 from the position P4.Moreover, when the link 178 ₂ rotates further in the counterclockwisedirection for a number of rotations, the upper PEZ ring 124 achieves theposition P2 between the upper electrode 122 and the UEE 126 from theposition P3. Also, when the link 178 ₂ rotates further in thecounterclockwise direction for a number of rotations, the upper PEZ ring124 achieves the position P1 between the upper electrode 122 and the UEE126 from the position P2. When the link 178 ₂ rotates further in theclockwise direction for a number of rotations, the upper PEZ ring 124loses its position between the upper electrode 122 and the UEE 126.

A link is connected to a motor via a connection mechanism, e.g., gears.For example, the link 178 ₁ is connected to the motor 210 ₁ via aconnection mechanism, the link 178 ₂ is connected to the motor 210 ₂ viaa connection mechanism, and the link 178 ₃ is connected to the motor 210₃ via a connection mechanism.

In various embodiments, one motor is connected to the links 178 ₁ and178 ₃. When the single motor rotates, the links 178 ₁ and 178 ₃ rotatesimultaneously to achieve a position of the upper electrode 122 and theUEE 126.

FIG. 7B is a block diagram of an embodiment of a system 187 for using apositioning mechanism to control a position of the upper PEZ ring 124.The position of the upper PEZ ring 124 is controlled independent ofcontrol of positions of the upper electrode 122 and the UEE 126.

The system controller 170 receives program recipes 206 via the userinterface system 204. In addition, the program recipes 206 include anamount of vacuum and/or air to be created within a volume of thepositioning mechanism 146 to move the positioning mechanism 146 by adistance to further achieve the position P1, P2, P3, or P4 of the upperPEZ ring 124. The program recipes 206 further include an amount ofvacuum and/or air to be created within a volume of the positioningmechanism 216 ₁ to move the positioning mechanism 216 ₁ by a distance toachieve a position of the upper electrode 122. The program recipes 206also include an amount of vacuum and/or air to be created within avolume of the positioning mechanism 216 ₂ to move the positioningmechanism 216 ₂ by a distance to achieve a position of the UEE 126.

Upon retrieving the program recipes 206 from the memory device 176 (FIG.5), the system controller 170 sends a signal to a position controller212 ₁, sends a signal to the position controller 172, and sends a signalto a position controller 212 ₂. The signal sent to the positioncontroller 212 ₁ includes an amount of vacuum to be generated by avacuum pump and/or air compressor 214 ₁ to move the positioningmechanism 216 ₁ by a distance to achieve a position of the upperelectrode 122. Moreover, the signal sent to the position controller 172includes an amount of vacuum to be generated by a vacuum pump and/or aircompressor 184 to move the positioning mechanism 146 by a distance toachieve a position of the upper PEZ ring 124. Also, the signal sent tothe position controller 212 ₂ includes an amount of vacuum to begenerated by a vacuum pump and/or air compressor 214 ₂ to move thepositioning mechanism 216 ₂ by a distance to achieve a position of theUEE 126.

The vacuum pump and/or air compressor 214 ₁ generates an amount ofvacuum within the positioning mechanism 216 ₁ and the amount is receivedfrom the position controller 212 ₁. Similarly, the vacuum pump and/orair compressor 184 generates an amount of vacuum within the positioningmechanism 146 and the amount is received from the position controller172. Also, the vacuum pump and/or air compressor 214 ₂ generates anamount of vacuum within the positioning mechanism 216 ₂ and the amountis received from the position controller 212 ₂.

The position of the upper electrode 122 changes when the position of thepositioning mechanism 216 ₁ changes. For example, a bottom surface 193of the positioning mechanism 216 ₁ abuts a top surface 189 of the upperelectrode 122. When a position of the bottom surface 193 of thepositioning mechanism 216 ₁ changes, a position of the top surface 189changes to achieve a position of the bottom surface 191 of the upperelectrode 122 with respect to the y-axis. The position of the bottomsurface 191 may be P1, P2, P3, or P4.

Similarly, the position of the upper PEZ ring 124 changes when theposition of the positioning mechanism 146 changes. For example, a bottomsurface 201 of the positioning mechanism 146 abuts a top surface 203 ofthe upper PEZ ring 124. When a position of the bottom surface 201 of thepositioning mechanism 146 changes, a position of the top surface 203changes to achieve a position of the bottom surface 205 of the upper PEZring 124 with respect to the y-axis. The position of the bottom surface205 may be P1, P2, P3, or P4.

Moreover, the position of the UEE 126 changes when the position of thepositioning mechanism 216 ₂ changes. For example, a bottom surface 207of the positioning mechanism 216 ₂ abuts a top surface 209 of the UEE126. When a position of the bottom surface 207 of the positioningmechanism 216 ₂ changes, a position of the top surface 209 changes toachieve a position of the bottom surface 126 a of the UEE 126 withrespect to the y-axis. The position of the bottom surface 126 a may beP1, P2, P3, or P4.

In a number of embodiments, when the positioning mechanism 146 movesdownward in a vertical direction for a distance, the upper PEZ ring 124achieves the position P1 between the upper electrode 122 and the UEE126. In a number of embodiments, the vertical direction is along anorientation that is substantially perpendicular, e.g., perpendicular orabout perpendicular, to a top surface of the lower electrode 110.Moreover, when the positioning mechanism 146 moves further in thedownward vertical direction for a distance, the upper PEZ ring 124achieves the position P2 between the upper electrode 122 and the UEE126. Also, when the positioning mechanism 146 moves further in thedownward vertical direction for a distance, the upper PEZ ring 124achieves the position P3 between the upper electrode 122 and the UEE126. When the positioning mechanism 146 moves further in the downwardvertical direction for a distance, the upper PEZ ring 124 achieves theposition P4 between the upper electrode 122 and the UEE 126.

Similarly, when the positioning mechanism 146 moves in an upwardvertical direction for a distance, the upper PEZ ring 124 achieves theposition P3 between the upper electrode 122 and the UEE 126 from theposition P4. Moreover, when the positioning mechanism 146 moves furtherin the upward vertical direction for a distance, the upper PEZ ring 124achieves the position P2 between the upper electrode 122 and the UEE 126from the position P3. Also, when the positioning mechanism 146 movesfurther in the upward vertical direction for a distance, the upper PEZring 124 achieves the position P1 between the upper electrode 122 andthe UEE 126 from the position P2. When the positioning mechanism 146moves further in the upward vertical direction for a distance, the upperPEZ ring 124 loses its position between the upper electrode 122 and theUEE 126.

In various embodiments, one positioning mechanism is attached to thepositioning mechanisms 216 ₁ and 216 ₂. When the single positioningmechanism changes its position with respect to the y-axis, thepositioning mechanisms 216 ₁ and 216 ₂ also change their positions toachieve a position of the upper electrode 122 and the UEE 126.

FIG. 8 is a block diagram of an embodiment of a system 215 forcontrolling a position of the upper PEZ ring 124 via the motor 210 ₂. Asshown in FIG. 8, the motor controller 208 ₂ and the motor 210 ₂ arelocated within a housing 240. The link 178 ₂ may be a lead screw, a rod,a toothgear, a pinset, or a combination thereof. When the link 178 ₂ isa toothgear, a mating toothgear is fabricated within the upper PEZ ring124 to allow the upper PEZ ring 124 to move vertically along the y-axiswith rotation of the motor 210 ₂.

FIG. 9 is a cross-sectional view of an embodiment of a plasma processingchamber 219. The plasma processing chamber 219 includes an upperelectrode 221, an upper PEZ ring 223, an UEE 225, an LEE 227, a lowerPEZ ring 229, and a lower electrode 231. As shown, the upper PEZ ring223 is not clamped with the upper electrode 221 or with the UEE 225. Theupper PEZ ring 223 moves along the y-axis independent of whether theupper electrode 221 or the UEE 225 moves along the y-axis.

FIG. 10 is a zoom-in of the cross-section view of an embodiment of theplasma processor chamber 219. The substrate 116 is placed between theupper electrode 221 and the lower electrode 231. The substrate 116 alsolies between the upper PEZ ring 223 and the lower PEZ ring 229. Thelower PEZ ring 229 shields the lower electrode 231 from plasma generatedwithin an edge processing region.

FIG. 11 is a cross-sectional view of an embodiment of a portion 241 of aplasma processing chamber. The portion 241 includes an upper electrode234 that is grounded. The portion 241 further includes the lowerelectrode 110. The lower PEZ ring 142 horizontally abuts the lowerelectrode 110 and a lower electrode extension 236 horizontally abuts thelower PEZ ring 142. Also, a ring 239, made of a dielectric material,surrounds the lower electrode 110. The ring 239 electrically isolatesthe lower electrode 110 from the lower electrode extension 236 and fromthe bottom wall 134 (FIG. 3) of the processing chamber 136 (FIG. 3). Thelower electrode extension 236 abuts the ring 239. The lower electrode110, the lower PEZ ring 142, the ring 239, and the lower electrodeextension 236 form part of a lower electrode assembly.

The upper PEZ ring 124 abuts the upper electrode 234. An upper metalcomponent 232 abuts the upper electrode 234, the upper PEZ ring 124, andthe upper electrode extension 244. The upper electrode extension 244abuts the upper PEZ ring 124. The upper PEZ ring 124 is coupled with thepositioning mechanism 146. For example, the positioning mechanism 146abuts the upper PEZ ring 124. The positioning mechanism 146 verticallymoves up and down to change a position of the upper PEZ ring 124. Theposition of the upper PEZ ring 124 is changed to achieve the positionP1, P2, P3, or P4. Any remaining plasma, after a processing operation,and process gases are captured by the vacuum pump 192 (FIG. 3) from thegap 139 via holes 243.

FIG. 12 is a diagram of an embodiment of a system 281 for generatingplasma within an edge processing region. When power is supplied by theRF power supply 152 to the LEE 236 via the lower electrode 110 and theprocess gas are present within the gap 139, plasma is created within anedge processing region.

In a number of embodiments, instead of supplying RF power from the RFpower supply 152, power is supplied by another RF power supply 283 thatis coupled to the LEE 236. In these embodiments, the UEE 244 is groundedvia the upper metal component 232 (FIG. 11) and the lower electrode 110is also grounded via a switch. Also, the upper electrode 234 isgrounded. The supply of power from the RF power supply 283 createsplasma within edge processing region 111 (FIG. 1A). During a processingoperation performed on the substrate 116, the upper PEZ ring 124 ismoved between different positions, e.g., positions P1 thru P4, without aneed to move the upper electrode 234 and a need to move the UEE 244. Themovement of the upper PEZ ring 124 allows control of an amount of plasmawithin the gap 139 to further allow achievement of different rates ofetching of a region of substrate 116 within the edge exclusion region121.

FIG. 13 is a diagram of a system 291 for calibrating and using spacersto determine the positions P1 thru P4. The upper electrode 234 and anUEE 250 are calibrated via spacers 252 ₁ and 252 ₂ to be placed at theposition P4 along the y-axis. The upper PEZ ring 124 is moved down alongthe y-axis until the upper PEZ ring 124 touches a spacer 186 ₁, which isplaced at the position P4. When the PEZ ring 124 touches the spacer 186₁, movement of the PEZ ring 124 is stopped. After calibrating theposition P4 of the upper PEZ ring 124, the upper PEZ ring 124 is movedup along the y-axis to remove the spacer 186 ₁.

After calibrating the upper PEZ ring 124 for the position P4, the upperPEZ ring 124 is calibrated for the position P3. The upper PEZ ring 124is calibrated for the position P3 in a manner similar to calibrating theupper PEZ ring 124 for the position P4. For example, the upper PEZ ring124 is moved down along the y-axis until the upper PEZ ring 124 touchesa spacer 186 ₂, which is placed at the position P3. The spacer 186 ₂ istaller than the spacer 186 ₁. When the PEZ ring 124 touches the spacer186 ₂, movement of the PEZ ring 124 is stopped. After calibrating theposition P3 of the upper PEZ ring 124, the upper PEZ ring 124 is movedup along the y-axis to remove the spacer 186 ₂.

Moreover, after calibrating the upper PEZ ring 124 for the position P3,the upper PEZ ring 124 is calibrated for the position P2. The upper PEZring 124 is calibrated for the position P2 in a manner similar tocalibrating the upper PEZ ring 124 for the position P3 or P4. Forexample, the upper PEZ ring 124 is moved down along the y-axis until theupper PEZ ring 124 touches a spacer 186 ₃, which is placed at theposition P2. The spacer 186 ₃ is taller than the spacer 186 ₂. When thePEZ ring 124 touches the spacer 186 ₃, movement of the PEZ ring 124 isstopped. After calibrating the position P2 of the upper PEZ ring 124,the upper PEZ ring 124 is moved up along the y-axis to remove the spacer186 ₃.

After calibrating the upper PEZ ring 124 for the position P2, the upperPEZ ring 124 is calibrated for the position P1. The upper PEZ ring 124is calibrated for the position P1 in a manner similar to calibrating theupper PEZ ring 124 for the position P2, P3, or P4. For example, theupper PEZ ring 124 is moved down along the y-axis until the upper PEZring 124 touches a spacer 186 ₄, which is placed at the position P1. Thespacer 186 ₄ is taller than the spacer 186 ₃. When the PEZ ring 124touches the spacer 186 ₄, movement of the PEZ ring 124 is stopped. Aftercalibrating the position P1 of the upper PEZ ring 124, the upper PEZring 124 is moved up along the y-axis to remove the spacer 186 ₄.

It should be noted that any order of calibrating the upper PEZ ring 124is used. For example, the upper PEZ ring 124 is calibrated for theposition P1 first, then for the positions P2, P3, and P4. As anotherexample, the upper PEZ ring 124 is calibrated for the position P1, thenfor the position P4, then for the position P2, and then for the positionP3. It should be noted that during calibration of the upper PEZ ring 124between the positions P1 thru P4, the spacers 252 ₁ and 252 ₂ are placedat the position P1 to calibrate the upper electrode 234 and the UEE 250to be placed at the position P1. In several embodiments, duringcalibration of the upper PEZ ring 124 between the positions P1 thru P4,the spacers 252 ₁ and 252 ₂ are placed at the position P2, P3, or P4, tocalibrate the upper electrode 234 and the UEE 250 to be placed at theposition P2, P3, or P4.

After the calibration of the upper PEZ ring 124 for all the positions P1thru P4, plasma is created within the plasma chamber 136 (FIG. 3) andthe upper PEZ ring 124 is moved down along the y-axis to prepare thesubstrate 116 for a processing operation, e.g., etching, depositing,cleaning, etc.

In a number of embodiments, the spacers 186 ₁, 186 ₂, 186 ₃, and 186 ₄are used after the calibration to facilitate placement of the upper PEZring 124 at the corresponding positions P1, P2, P3, and P4. For example,the spacer 186 ₁ is used during or after creation of plasma within theplasma chamber 136 to prevent further downward vertical movement fromthe position P4 of the upper PEZ ring 124.

FIG. 14 is an isometric view of an embodiment of the upper PEZ ring 124that is supported by multiple spacers 186 ₁, 254, and 256 and FIG. 15 isa top view of the upper PEZ ring 124 that is supported by the spacers186 ₁, 254, and 256. The spacers 186 ₁, 254, and 256 are placed at theposition P1 to calibrate the upper PEZ ring 124. In several embodiments,the spacers 186 ₁, 254, and 256 are placed at the position P1 to form atriangle between the spacers 186 ₁, 254, and 256. In a number ofembodiments, multiple spacers are placed under the upper PEZ ring 124 atthe position P2, P3, or P4, to form a triangle between the spacers tocalibrate the upper PEZ ring 124.

FIG. 16 is a diagram of an embodiment of a system 295 in which an upperPEZ ring 258 is equipped with tensioners 264 to achieve one or morepositions, e.g., L1 and L2. The tensioners 264 perform spring action ofsliding in and out of slots 266 of an UEE 262 and in and out of slots297 of an upper electrode 260.

When a link coupled with the upper PEZ ring 258 is rotated in theclockwise direction or a positioning mechanism coupled with the upperPEZ ring 258 is moved in a vertical downward direction or a heatingelement attached to the upper PEZ ring 258 expands in the verticaldownward direction, the tensioner 264 ₄ extends into the slot 297 ₁ andthe tensioner 264 ₂ extends into the slot 266 ₁. The tensioner 264 ₄extends into the slot 297 ₁ and the tensioner 264 ₂ extends into theslot 266 ₁ to achieve the position L2.

Moreover, when a link coupled with the upper PEZ ring 258 is rotatedfurther in the clockwise direction or a positioning mechanism coupledwith the upper PEZ ring 258 is moved further in a vertical downwarddirection or a heating element attached to the upper PEZ ring 258expands further in the vertical downward direction, the tensioner 264 ₄retracts from the slot 297 ₁ and extends into the slot 297 ₂, thetensioner 264 ₃ extends into the slot 297 ₁, the tensioner 264 ₂retracts from the slot 266 ₁ and extends into the slot 266 ₂, and thetensioner 264 ₁ extends into the slot 266 ₁. The tensioners 264 ₃ and264 ₄ extend into the slots 297 and the tensioners 264 ₁ and 264 ₂extend into the slots 266 to achieve the position L1.

Similarly, when a link coupled with the upper PEZ ring 258 is rotated inthe counterclockwise direction or a positioning mechanism coupled withthe upper PEZ ring 258 is moved in a vertical upward direction or aheating element attached to the upper PEZ ring 258 contracts in thevertical upward direction, the tensioner 264 ₄ retreats from the slot297 ₂ and the tensioner 264 ₂ retreats from the slot 266 ₂. Moreover,the tensioner 264 ₃ retreats from the slot 297 ₁ and the tensioner 264 ₁retreats from the slot 266 ₁. Also, the tensioner 264 ₄ expands into theslot 297 ₁ and the tensioner 264 ₂ expands into the slot 266 ₁ to allowthe upper PEZ ring 258 to achieve the position L2.

Moreover, when a link coupled with the upper PEZ ring 258 is rotatedfurther in the counterclockwise direction or a positioning mechanismcoupled with the upper PEZ ring 258 is moved further in a verticalupward direction or a heating element attached to the upper PEZ ring 258further contracts in the vertical upward direction, the tensioner 264 ₄retreats from the slot 297 ₁ and the tensioner 264 ₂ retreats from theslot 266 ₁. The tensioner 264 ₄ retreats from the slot 297 ₁ and thetensioner 264 ₂ retreats from the slot 266 ₁ to decouple the upper PEZring 258 at the position L1 from the upper electrode 260 and the UEE262.

It should be noted that although two positions L1 and L2 are illustratedin FIG. 16, in a number of embodiments, any number of positions areused. Moreover, any number of slots and tensioners to achieve the numberof positions are used. For example, the upper PEZ ring 124 is moved to aposition that is substantially parallel, e.g., same or substantially thesame level measured along the y-axis, to a position of the upperelectrode 122. As another example, the upper PEZ ring 124 is moved toprotrude past the position P1 of the upper electrode 122 in a downwardvertical direction toward the lower PEZ ring 112. As yet anotherexample, the upper PEZ ring 124 is moved to recess away from theposition P1 of the upper electrode 122 and in a vertical direction awayfrom the lower PEZ ring 112.

FIG. 17 is a graph that is an embodiment of a plot of normalized etchrate (ER) versus a radius on the substrate 116 (FIG. 1). The radius onthe substrate 116 is measured from a center of the substrate 116. Theplot includes a curve 302 that is generated when the gap G1 is formed.The plot further includes a curve 304 that is generated when the gap G2is formed, a curve 306 that is generated when the gap G3 is formed, anda curve 308 that is generated when the gap G4 is formed. As shown in theplot, for a radius R on the substrate, a normalized etch rate E1 isgreater than a normalized etch rate E2. The normalized etch rate E1 ismeasured when the gap G1 exists between the upper PEZ ring 124 and thesubstrate 116 (FIG. 1). The normalized etch rate E2 is measured when thegap G2 exists between the upper PEZ ring 124 and the substrate 116. Thegap G1 allows a higher amount of plasma than an amount of plasma withinthe gap G2 to achieve the higher etch rate E1 at the radius R.

It should be noted that although the above-described embodiments includevertical movement of an upper PEZ ring, an upper electrode, and/or anUEE, in various embodiments, instead of the vertical movement, anoblique, e.g., slanted, skewed, sloping, etc., movement may occur.

Embodiments described herein may be practiced with various computersystem configurations including hand-held devices, microprocessorsystems, microprocessor-based or programmable consumer electronics,minicomputers, mainframe computers and the like. The embodiments canalso be practiced in distributed computing environments where tasks areperformed by remote processing devices that are linked through anetwork.

With the above embodiments in mind, it should be understood that theembodiments can employ various computer-implemented operations involvingdata stored in computer systems. These operations are those requiringphysical manipulation of physical quantities. Any of the operationsdescribed herein that form part of the embodiments are useful machineoperations. The embodiments also relates to a device or an apparatus forperforming these operations. The apparatus may be specially constructedfor the required purpose, such as a special purpose computer. Whendefined as a special purpose computer, the computer can also performother processing, program execution or routines that are not part of thespecial purpose, while still being capable of operating for the specialpurpose. Alternatively, the operations may be processed by a generalpurpose computer selectively activated or configured by one or morecomputer programs stored in the computer memory, cache, or obtained overa network. When data is obtained over a network the data may beprocessed by other computers on the network, e.g., a cloud of computingresources.

One or more embodiments can also be fabricated as computer readable codeon a computer readable medium. The computer readable medium is any datastorage device that can store data, which can be thereafter be read by acomputer system. Examples of the computer readable medium include harddrives, network attached storage (NAS), ROM, RAM, compact disc-ROMs(CD-ROMs), CD-recordables (CD-Rs), CD-rewritables (CD-RWs), magnetictapes and other optical and non-optical data storage devices. Thecomputer readable medium can include computer readable tangible mediumdistributed over a network-coupled computer system so that the computerreadable code is stored and executed in a distributed fashion.

Although the method operations were described in a specific order, itshould be understood that other housekeeping operations may be performedin between operations, or operations may be adjusted so that they occurat slightly different times, or may be distributed in a system whichallows the occurrence of the processing operations at various intervalsassociated with the processing, as long as the processing of the overlayoperations are performed in the desired way.

Although the foregoing embodiments have been described in some detailfor purposes of clarity of understanding, it will be apparent thatcertain changes and modifications can be practiced within the scope ofthe appended claims. Accordingly, the present embodiments are to beconsidered as illustrative and not restrictive, and the embodiments arenot to be limited to the details given herein, but may be modifiedwithin the scope and equivalents of the appended claims.

1. A system for controlling a size of an edge exclusion region,comprising: an upper electrode; an upper plasma exclusion zone (PEZ)ring located besides the upper electrode; an upper electrode extensionlocated besides the upper PEZ ring; a system controller configured togenerate signals regarding a first position and a second position of theupper PEZ ring; an actuator; and a position controller coupled to thesystem controller and the actuator, wherein the position controller isconfigured to receive the signals from the system controller, whereinthe position controller is configured to control the actuator based onthe signals to achieve the first position and the second position,wherein the first and second positions are achieved independent of anymovement of the upper electrode.
 2. The system of claim 1, furthercomprising a lower PEZ ring positioned below the upper PEZ ring, whereinan edge processing region is formed between the upper PEZ ring and thelower PEZ ring, wherein the first position corresponds to a first volumeof the edge processing region and the second position corresponds to asecond volume of the edge processing region.
 3. The system of claim 1,further comprising: an input device, wherein the system controller isconfigured to receive the first position and the second position from auser via the input device; and a memory device, wherein the systemcontroller is configured to access the first position and the secondposition from the memory device, wherein the actuator includes a link ora positioning mechanism, wherein the link includes a lead screw, a rod,a toothgear, or a pinset, wherein the positioning mechanism includes abellow or a bladder.
 4. The system of claim 1, further comprising: avacuum pump configured to generate a vacuum within the actuator, whereinthe position controller is configured to control a position of theactuator via the vacuum pump; and a spacer configured to stop movementof the upper PEZ ring when the upper PEZ ring reaches the first positionor the second position.
 5. The system of claim 1, wherein the secondposition is below the first position.
 6. The system of claim 1, whereinthe second position is lower than the first position, wherein each ofthe first and second positions are measured with respect to a level ofthe upper electrode.
 7. The system of claim 1, wherein the upper PEZring is configured to reduce an effect of plasma on the upper electrode.8. The system of claim 1, wherein the upper electrode and the upperelectrode extension are coupled to a ground potential.
 9. The system ofclaim 1, further comprising a lower PEZ ring located below the upper PEZring, wherein the upper PEZ ring is configured to move to the secondposition in a vertical direction to be closer to the lower PEZ ring,wherein the upper PEZ ring is closer to lower PEZ ring at the secondposition compared to when the upper PEZ ring is at the first position.10. The system of claim 1, further comprising a lower PEZ ring locatedbelow the upper PEZ ring, wherein the upper PEZ ring is configured tomove to the second position in a vertical direction to be away from thelower PEZ ring, wherein the upper PEZ ring is away from the lower PEZring at the second position compared to when the upper PEZ ring is atthe first position.
 11. A plasma chamber for controlling a size of anedge exclusion zone, comprising: an upper electrode; an upper plasmaexclusion zone (PEZ) ring located besides the upper electrode, whereinthe upper PEZ ring is configured to move vertically independent of aposition of the upper electrode; and an upper electrode extensionlocated besides the upper PEZ ring.
 12. The plasma chamber of claim 11,wherein the upper PEZ ring is configured to be fixed at a position amonga plurality of positions in the vertical direction.
 13. The plasmachamber of claim 11, further comprising a lower PEZ ring located belowthe upper PEZ ring to form an edge processing region between the upperPEZ ring and the lower PEZ ring, wherein the upper PEZ ring isconfigured to be move between any two of the positions in the verticaldirection to modify a volume of the edge processing region.
 14. Theplasma chamber of claim 11, further comprising: a lower electrodelocated below the upper electrode to form a gap between the upper andlower electrodes; a lower PEZ ring located besides the lower electrodeand below the upper PEZ ring to form a gap between the upper PEZ ringand the lower PEZ ring; and a lower electrode extension located next tothe lower PEZ ring and below the upper electrode extension to form a gapbetween the upper electrode extension and the lower electrode extension.15. The plasma chamber of claim 14, wherein the lower electrode iscoupled to a radio frequency (RF) power supply via an impedance matchingcircuit, wherein the lower electrode extension is coupled to a groundpotential.
 16. The plasma chamber of claim 14, wherein the lowerelectrode extension is coupled to an RF power supply.
 17. A method forbevel edge cleaning, the method comprising: positioning a lowerelectrode below an upper electrode; placing an upper electrode extensionperipheral to the upper electrode; placing a lower electrode extensionperipheral to the lower electrode; and situating an upper plasmaexclusion zone (PEZ) ring between the upper electrode and the upperelectrode extension; and moving the upper PEZ ring between multiplepositions while maintaining the upper electrode at a position.
 18. Themethod of claim 17, further comprising engaging the upper PEZ ring at afirst one of the positions to be closer to a lower PEZ ring compared toa second one of the positions.
 19. The method of claim 17, wherein themultiple positions include a level above a level of a lower surface ofthe upper electrode, a level at the level of the lower surface of theupper electrode, and a level below the level of the lower surface of theupper electrode.
 20. The method of claim 17, wherein moving the upperPEZ ring between the multiple positions while maintaining the upperelectrode at the position is performed to change an area of a bevel edgeof a substrate that is etched.